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Theory of dislocations in diamond and silicon and their interaction with hydrogen

Lookup NU author(s): Professor Patrick Briddon

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Abstract

Dislocations in semiconductors can be strongly affected by a hydrogen plasma; core states may be passivated and mobility changed. For example, in silicon the activation barrier for dislocation motion drops by 1.0 eV upon exposure to H plasma for one hour at 470-540 °C. If such an effect were to be found in diamond, a simple scaling argument would yield an activation energy of 1.9 eV. Here, density functional calculations have been applied to the 90° partial dislocation in diamond which confirm this prediction. They also show that, energetically, the soliton model for motion of the 90° partial is as viable as the strained-bond model.

Publication metadata

Author(s): Heggie MI, Jenkins S, Ewels CP, Jemmer P, Jones R, Briddon PR

Publication type: Article

Publication status: Published

Journal: Journal of Physics: Condensed Matter

Year: 2000

Volume: 12

Issue: 49

Pages: 10263-10270

ISSN (print): 0953-8984

ISSN (electronic): 1361-648X

Publisher: Institute of Physics Publishing Ltd.

URL: http://dx.doi.org/10.1088/0953-8984/12/49/327

DOI: 10.1088/0953-8984/12/49/327

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