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Hydrogen Interaction with Dislocations in Si

Lookup NU author(s): Professor Patrick Briddon

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Abstract

An H plasma has a remarkable effect on dislocation mobility in silicon, reducing its activation energy to 1.2 eV. Applying density functional theory to the interactions of H and H2 with the core of the 90° partial dislocation in Si, we have identified a path for motion involving kink formation and migration at hydrogenated core bonds which conforms exactly to the experimentally measured activation energy.


Publication metadata

Author(s): Ewels CP, Leoni S, Heggie MI, Jemmer P, Hernandez E, Jones R, Briddon PR

Publication type: Article

Publication status: Published

Journal: Physical Review Letters

Year: 2000

Volume: 84

Issue: 4

Pages: 690-693

ISSN (print): 0031-9007

ISSN (electronic): 1079-7114

Publisher: American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevLett.84.690

DOI: 10.1103/PhysRevLett.84.690


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