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Intrinsic defects and the D1 to D4 optical bands detected in plastically deformed Si

Lookup NU author(s): Angharad Jones, Dr Jon Goss, Professor Patrick Briddon

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Abstract

The properties of multi-vacancy and multi-interstitial defects that possess luminescent bands around 1 eV are reviewed. Prominent among these are the hexavacancy and tri-and tetra-self-interstitial defects. It is suggested that the formation of these defects on dislocation cores could lead to the D1 to D4 photoluminescent bands linked to dislocations in Si and SiGe.


Publication metadata

Author(s): Jones R, Coomer BJ, Goss JP, Oberg S, Briddon PR

Publication type: Article

Publication status: Published

Journal: Physica Status Solidi (B) Basic Research

Year: 2000

Volume: 222

Issue: 1

Pages: 133-140

Print publication date: 01/11/2000

ISSN (print): 0370-1972

ISSN (electronic): 1521-3951

Publisher: Wiley-Blackwell Publishing

URL: http://dx.doi.org/10.1002/1521-3951(200011)222:1<133::AID-PSSB133>3.0.CO;2-D

DOI: 10.1002/1521-3951(200011)222:1<133::AID-PSSB133>3.0.CO;2-D


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