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Desorption of organic species from the GaAs (100) surface at low temperatures using low energy electron irradiation in a hydrogen ambient

Lookup NU author(s): Professor Lidija Siller

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Abstract

We present a technique for the controlled removal of organic adsorbates from the GaAs (100) surface incorporating hydrogen dosing (atomic or molecular) combined with low-energy electron irradiation. High-resolution electron energy-loss and Auger electron spectroscopes verify a considerable desorption of carbon/hydrocarbons following electron irradiation at 50 eV under a hydrogen atom flux even at room temperature. At a sample temperature of 500°C, static secondary ion mass spectroscopy data demonstrate selective area removal of carbon from the surface following 25 eV electron irradiation in a molecular hydrogen ambient, with a desorption rate controlled by the incident electron flux. © 2000 American Institute of Physics.

Publication metadata

Author(s): Siller L; Chen Y; Pepper M; Schmidt J; Barnard JC; Palmer RE; Burke TM; Smith MP; Brown SJ; Ritchie DA

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2000

Volume: 76

Issue: 21

Pages: 3034-3036

ISSN (print): 0003-6951

ISSN (electronic): 1077-3118

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.126570

DOI: 10.1063/1.126570

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