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Surface preparation for Schottky metal - 4H-SiC contacts formed on plasma-etched SiC

Lookup NU author(s): Dominique Morrison, Dr Christopher Johnson, Professor Nick Wright, Professor Anthony O'Neill

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Abstract

Silicon-carbide-based devices frequently require a Schottky gate to be deposited on a plasma-etched surface. This paper considers the effectiveness of nine different pre-metallization surface preparation procedures in removing the etch damage. The surfaces were assessed by x-ray photoelectron spectroscopy and by current-voltage measurement of nickel Schottky diodes formed on both reactive-ion-etched and non-reactive-ion-etched silicon face 4H-SiC. The treatments included simple UV-ozone and solvent cleans, oxygen plasma, deposited oxide and thermal oxidation. It was confirmed that the only process which removed all traces of surface contamination and etch damage, producing ideal Schottky diodes, was sacrificial oxidation.

Publication metadata

Author(s): Wright NG; O'Neill AG; Morrison DJ; Johnson CM; Pidduck AJ; Moore V; Wilding PJ; Hilton KP; Uren MJ

Publication type: Article

Publication status: Published

Journal: Semiconductor Science and Technology

Year: 2000

Volume: 15

Issue: 12

Pages: 1107-1114

ISSN (print): 0268-1242

ISSN (electronic): 1361-6641

Publisher: Institute of Physics Publishing Ltd.

URL: http://dx.doi.org/10.1088/0268-1242/15/12/302

DOI: 10.1088/0268-1242/15/12/302

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