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Lookup NU author(s): Professor Patrick Briddon,
Dr Matthew Kitchin,
Professor Milan Jaros
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We introduce Si/Ge self-assembled quantum dots for infrared applications operating in the 3-5 μm range. Conventional Si/Ge quantum well structures are transparent to such wavelengths in the absence of heavy doping. We show that the high degree of strain lowers the bandgap and also that the electrons and holes are both localized in the interracial region. This will consequently enhance the optical transition probabilities.
Author(s): Jaros M; Briddon PR; North SM; Kitchin MR; Cusack MA
Publication type: Article
Publication status: Published
Journal: Semiconductor Science and Technology
ISSN (print): 0268-1242
ISSN (electronic): 1361-6641
Publisher: Institute of Physics Publishing Ltd.
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