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Si/Ge self-assembled quantum dots for infrared applications

Lookup NU author(s): Professor Patrick Briddon, Stephen North, Dr Matthew Kitchin, Professor Milan Jaros

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Abstract

We introduce Si/Ge self-assembled quantum dots for infrared applications operating in the 3-5 μm range. Conventional Si/Ge quantum well structures are transparent to such wavelengths in the absence of heavy doping. We show that the high degree of strain lowers the bandgap and also that the electrons and holes are both localized in the interracial region. This will consequently enhance the optical transition probabilities.


Publication metadata

Author(s): Jaros M; Briddon PR; North SM; Kitchin MR; Cusack MA

Publication type: Article

Publication status: Published

Journal: Semiconductor Science and Technology

Year: 2001

Volume: 16

Issue: 11

Pages: L81-L84

ISSN (print): 0268-1242

ISSN (electronic): 1361-6641

Publisher: Institute of Physics Publishing Ltd.

URL: http://dx.doi.org/10.1088/0268-1242/16/11/102

DOI: 10.1088/0268-1242/16/11/102


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