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Evidence for H*2 trapped by carbon impurities in silicon

Lookup NU author(s): Professor Patrick Briddon

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Abstract

Local mode spectroscopy and ab initio modelling are used to investigate two trigonal defects found in carbon-rich Si into which H had been in-diffused. Isotopic shifts with D and 13C are reported along with the effect of uniaxial stress. Ab initio modelling studies suggest that the two defects are two forms of the CH*2 complex where one of the two hydrogen atoms lies at an anti-bonding site attached to C or Si, respectively. The two structures are nearly degenerate and possess vibrational modes in good agreement with those observed. © 2001 Elsevier Science B.V. All rights reserved.


Publication metadata

Author(s): Hourahine B, Jones R, Oberg S, Briddon PR, Markevich VP, Newman RC, Hermansson J, Kleverman M, Lindstrom JL, Murin LI, Fukata N, Suezawa M

Publication type: Article

Publication status: Published

Journal: Physica B: Condensed Matter

Year: 2001

Volume: 308-310

Pages: 197-201

ISSN (print): 0921-4526

ISSN (electronic): 1873-2135

Publisher: Elsevier B.V.

URL: http://dx.doi.org/10.1016/S0921-4526(01)00719-0

DOI: 10.1016/S0921-4526(01)00719-0

Notes: International Conference on Defects in Semiconductors


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