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Dislocation related photoluminescence in silicon

Lookup NU author(s): Professor Patrick Briddon

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Abstract

The dislocation related photoluminescence in silicon was investigated. The stability and electrical activity, bound to 90° and 30° partial dislocations, was investigated. A fully self-consistent density functional method (AIMPRO) was used to obtain the binding energy of four interstitials in I4. The AIMPRO method gave optical transitions around 0.8-0.9 eV for isolated I3 and I4 defects which is in agreement with the W and X transitions. Transmission electron microscopy images showed that the mobility of dislocations was obstructed by interstitial aggregates.


Publication metadata

Author(s): Blumenau AT, Jones R, Oberg S, Briddon PR, Frauenheim T

Publication type: Article

Publication status: Published

Journal: Physical Review Letters

Year: 2001

Volume: 87

Issue: 18

Pages: 1874041-1874044

ISSN (print): 0031-9007

ISSN (electronic): 1079-7114

Publisher: American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevLett.87.187404

DOI: 10.1103/PhysRevLett.87.187404


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