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Modeling GaInAs/GaAsSb type-II superlattices grown on InP for optoelectronic applications

Lookup NU author(s): Dr Matthew Kitchin, Dr Michael Shaw, Dr Elizabeth Corbin, Dr Jerry Hagon, Professor Milan Jaros

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Abstract

We present a microscopic model of emission in a series of strain-compensated Ga1-xInxAs/GaAs1-ySby type-II superlattice structures with infrared applications. The need for an improved understanding of the optoelectronic characteristics of these systems, both in terms of basic physics and technological applications, is identified. The band lineup in heterostructures containing alloys is frequently determined using the Model Solid theory with linear interpolation of input parameters between those of the constituent compounds. However, for the present superlattices, this approach did not provide a description of the band lineups which was consistent with experimental data. Band lineups were subsequently fitted to achieve spectral cutoff measurements, and we found that these offsets were in better agreement with experimental data than those predicted using the above method. On using these lineups as input to our empirical pseudopotential model, lineshapes exhibiting good agreement with experiment were computed. We analyze the role played by wave-function confinement in determining spectral features and investigate the potentially degrading effects of Auger recombination on device performance. The results of this study advance the characterization of these systems, indicating links between their microscopic properties and optical spectra.


Publication metadata

Author(s): Kitchin MR, Shaw MJ, Corbin EA, Hagon JP, Jaros M

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Proceedings of SPIE - The International Society for Optical Engineering

Year of Conference: 2001

Pages: 159-168

ISSN: 0277-786X

Publisher: S P I E - International Society for Optical Engineering

URL: http://dx.doi.org/10.1117/12.432561

DOI: 10.1117/12.432561


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