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Systematic study of type II Ga1-xInxSb/InAs superlattices for infra-red detection in the 10-12 μm wavelength range

Lookup NU author(s): Dr Elizabeth Corbin, Dr Michael Shaw, Dr Matthew Kitchin, Dr Jerry Hagon, Professor Milan Jaros

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Abstract

We perform a systematic study of the factors governing the optical properties of type II Ga1-xInxSb/InAs superlattice structures. We map the parameter space corresponding to the layer widths, alloy concentrations and interface bonding types, and identify those structures for which the fundamental gap lies in the desired range for device application. In addition, we examine the higher lying miniband energies to assess the structures for favourable Auger recombination limits. The microscopic interface bonding configuration is shown to have a significant impact upon the magnitude of the fundamental gap, and confirms the requirement for full-bandstructure calculations in the evaluation of possible structures. We study the features of the optical spectra for those structures whose bandstructures are recognized as most suitable for detector applications.


Publication metadata

Author(s): Corbin E; Shaw MJ; Jaros M; Hagon JP; Kitchin MR

Publication type: Article

Publication status: Published

Journal: Semiconductor Science and Technology

Year: 2001

Volume: 16

Issue: 4

Pages: 263-272

ISSN (print): 0268-1242

ISSN (electronic): 1361-6641

Publisher: Institute of Physics Publishing Ltd

URL: http://dx.doi.org/10.1088/0268-1242/16/4/314

DOI: 10.1088/0268-1242/16/4/314


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