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Electrical activity of carbon-hydrogen centers in Si

Lookup NU author(s): Professor Patrick Briddon

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Abstract

The electrical activity of Cs-H defects in Si has been investigated in a combined modeling and experimental study. High-resolution Laplace capacitance spectroscopy with the uniaxial stress technique has been used to measure the stress-energy tensor and the results are compared with the theoretical modeling. At low temperatures, implanted H is trapped as a negative-U center with a donor level in the upper half of the gap. However, at higher temperatures, H migrates closer to the carbon impurity and the donor level falls, crossing the gap. At the same time, an acceptor level is introduced into the upper gap making the defect a positive-U center.


Publication metadata

Author(s): Briddon PR; Andersen O; Peaker AR; Dobaczewski L; Nielsen KB; Hourahine B; Jones R; Oberg S

Publication type: Article

Publication status: Published

Journal: Physical Review B: Condensed Matter and Materials Physics

Year: 2002

Volume: 66

Issue: 23

Pages: 2352051-2352058

ISSN (print): 0163-1829

ISSN (electronic):

Publisher: American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevB.66.235205

DOI: 10.1103/PhysRevB.66.235205


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