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Structure of tin-vacancy defects in silicon

Lookup NU author(s): Professor Patrick Briddon

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Abstract

Tin-vacancy complexes Snn-Vm, n≤2, m≤2, are investigated by first-principles cluster and supercell methods. Their structures, spin-densities, electrical levels and formation energies are reported. It is found that the tin-vacancy interaction is short ranged and consequently the diffusion mechanism of Sn is somewhat different from that of the E-center. © 2002 Elsevier Science B.V. All rights reserved.


Publication metadata

Author(s): Kaukonen M, Jones R, Oberg S, Briddon PR

Publication type: Article

Publication status: Published

Journal: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Year: 2002

Volume: 186

Issue: 1-4

Pages: 24-29

Print publication date: 01/01/2002

ISSN (print): 0168-583X

ISSN (electronic): 1872-9584

Publisher: Elsevier

URL: http://dx.doi.org/10.1016/S0168-583X(01)00888-6

DOI: 10.1016/S0168-583X(01)00888-6


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