ePrints

Donor and acceptor doping of zinc oxide varistors

Lookup NU author(s): Dr Ian Gilbert

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Abstract

ZnO-based varistors containing 0-10000 ppm Ga were prepared by the mixed oxide route. Disc-shaped samples were sintered in air at 1030°C for 2 h. All products were of high density (>94% theoretical). Gallium addition led to a reduction in grain size from 12 μm to approximately 8 μm. From I-V characteristics the non-linear coefficients (α) were determined to be ∼38. The doped varistors exhibited donor-like behaviour for Ga contents up to 1500 ppm Ga and acceptor-like behaviour at higher levels. Above the 1500 ppm transition doping level, the leakage current density decreased and breakdown fields were consistently high.

Publication metadata

Author(s): Gilbert I, Freer R

Publication type: Article

Publication status: Published

Journal: Journal of Physics Condensed Matter

Year: 2002

Volume: 14

Issue: 4

Pages: 945-954

ISSN (print): 0953-8984

ISSN (electronic): 1361-648X

Publisher: Institute of Physics Publishing Ltd.

URL: http://dx.doi.org/10.1088/0953-8984/14/4/326

DOI: 10.1088/0953-8984/14/4/326

Altmetrics

Share