Browse by author
Lookup NU author(s): Dr Jose Coutinho,
Professor Patrick Briddon
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
Divacancy-hydrogen complexes (V2H and V2H2) in Si are studied by ab initio modelling using large supercells. Here we pay special attention to their electronic structure, showing that these defects produce deep carrier traps. Calculated electrical gap levels indicate that V2H2 is an acceptor, whereas V2H is amphoteric, with levels close to those of the well known divacancy. Finally our results are compared with the available data from deep level transient spectroscopy and electron paramagnetic resonance experiments.
Author(s): Coutinho J, Torres VJB, Jones R, Oberg S, Briddon PR
Publication type: Article
Publication status: Published
Journal: Journal of Physics: Condensed Matter
ISSN (print): 0953-8984
ISSN (electronic): 1361-648X
Publisher: Institute of Physics Publishing Ltd
Altmetrics provided by Altmetric