Lookup NU author(s): Professor Patrick Briddon
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
The properties of defect complexes consisting of a nitrogen vacancy with a substitutional beryllium or magnesium atom on neighboring lattice sites in hexagonal GaN are calculated using the AIMPRO local-density-functional theory method. Both types of defects VN-BeGa and V N-MgGa are bound with respect to their isolated constituents. They do not appear to have any electronic levels in the bandgap, and are expected to be neutral defects. Important structural differences are found. In its minimum energy configuration, the Be atom in the V N-BeGa complex lies nearly in the same plane as the three equivalent N atoms nearest to it. Thus, it has shorter Be-N bonds than the Ga-N distance in the bulk crystal, while the Mg atom in the VN-Mg Ga complex occupies a position closer the lattice site of the Ga atom it replaces. Hence, the VN-BeGa complex has a larger open volume than the VN-MgGa complex. This is consistent with positron annihilation experiments [Saarinen et al., J. Cryst. Growth 246, 281 (2002); Hautakangas et al., Phys. Rev. Lett. 90, 137402 (2003)]. The frequency of the highest local vibrational mode of the VN-Be Ga center is calculated to be within 3-4% of an infrared absorption line detected in Be-doped GaN [Clerjaud (private communication)].
Author(s): Latham CD, Jones R, Oberg S, Nieminen RM, Briddon PR
Publication type: Article
Publication status: Published
Journal: Physical Review B
ISSN (print): 0163-1829
Publisher: American Physical Society
Notes: Article no. 205209
Altmetrics provided by Altmetric