Lookup NU author(s): Sorin Soare,
Professor Steve Bull,
Dr Alton Horsfall,
Professor Nick Wright,
Professor Anthony O'Neill
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
The process-induced stress in interconnects within integrated circuits (IC) has a direct influence on the mean time to failure of the devices. Since measurement of stress in individual metallised lines is not possible by existing techniques, another approach has been adopted where a test structure is generated during fabrication based on a micro-rotating cantilever sensor. To support the design, finite element modeling (FEM) has been performed. By comparing the rotation predicted by FEM simulations and that observed experimentally, a clear discrepancy is observed which is critically dependent on the details of the sensor design, the pattern transfer of the lithographic process and on the dry etching processing.
Author(s): Dos Santos JMM, Wang K, Soare SM, Bull SJ, Horsfall AB, Wright NG, O'Neill AG, Terry JG, Walton AJ, Gundlach AM, Stevenson JTM
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Symposium on Thin Films - Stresses and Mechanical Properties X held at the 2003 MRS Fall Meeting
Year of Conference: 2003
Publisher: Materials Research Society
Library holdings: Search Newcastle University Library for this item