Lookup NU author(s): Dr Jose Coutinho,
Professor Patrick Briddon
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Unlike vacancy-oxygen defects, the role of Si interstitials (I) when trapped by interstitial oxygen (Oi) is far from clear. In an attempt to enlighten this interaction between these complexes, we report ab initio modeling of IOi defects. The calculated properties such as vibrational modes and spin density are compared with the available experimental data. We conclude with the assignment of the A18 EPR signal to a C1h symmetry IOi defect in the positive charge state. © 2003 Published by Elsevier B.V.
Author(s): Pinho N, Coutinho J, Jones R, Briddon PR
Editor(s): Bonde Nielsen K., Nylandsted Larsen A., Weyer G.
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Physica B: Condensed Matter, 22nd International Conference on Defects in (ICDS-22)
Year of Conference: 2003
Publisher: Elsevier BV