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Interaction between oxygen and single self-interstitials in silicon

Lookup NU author(s): Dr Jose Coutinho, Professor Patrick Briddon

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Abstract

Unlike vacancy-oxygen defects, the role of Si interstitials (I) when trapped by interstitial oxygen (Oi) is far from clear. In an attempt to enlighten this interaction between these complexes, we report ab initio modeling of IOi defects. The calculated properties such as vibrational modes and spin density are compared with the available experimental data. We conclude with the assignment of the A18 EPR signal to a C1h symmetry IOi defect in the positive charge state. © 2003 Published by Elsevier B.V.


Publication metadata

Author(s): Pinho N, Coutinho J, Jones R, Briddon PR

Editor(s): Bonde Nielsen K., Nylandsted Larsen A., Weyer G.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Physica B: Condensed Matter, 22nd International Conference on Defects in (ICDS-22)

Year of Conference: 2003

Pages: 575-577

ISSN: 0921-4526

Publisher: Elsevier BV

URL: http://dx.doi.org/10.1016/j.physb.2003.09.132

DOI: 10.1016/j.physb.2003.09.132


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