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The formation, dissociation and electrical activity of divacancy-oxygen complexes in Si

Lookup NU author(s): Dr Jose Coutinho, Professor Patrick Briddon

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Abstract

Density functional calculations are carried out on divacancy-oxygen (V 2O and V2O2) complexes in silicon, paying particular attention to their formation and dissociation mechanisms as well as their electrical activity. The formation of V2O around 220°C is controlled by the diffusion of V2 to immobile oxygen traps, while it dissociates around 300°C into VO and V. V2O and V 2O2 are found to possess deep single and double acceptor levels as well as deep donor levels similar to those of V2. © 2003 Elsevier B.V. All rights reserved.


Publication metadata

Author(s): Coutinho J, Jones R, Oberg S, Briddon PR

Editor(s): Bonde Nielsen K., Nylandsted Larsen A., Weyer G.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Physica B: Condensed Matter, 22nd International Conference on Defects in (ICDS-22)

Year of Conference: 2003

Pages: 523-527

ISSN: 0921-4526

Publisher: Elsevier BV

URL: http://dx.doi.org/10.1016/j.physb.2003.09.143

DOI: 10.1016/j.physb.2003.09.143


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