Lookup NU author(s): Dr Sanatan Chattopadhyay,
Dr Kelvin Kwa,
Dr Sarah Olsen,
Professor Anthony O'Neill
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Capacitance-voltage (C-V) characteristics are used to investigate double heterojunction strained Si/SiGe MOS capacitors. Structures of this type potentially form the channels of CMOS devices based on the strained Si/SiGe material system. The technique represents a fast and non-destructive method to determine important characteristics such as layer thicknesses, threshold voltages and band offsets. Moreover, it contributes to the design of optimum heterostructures for CMOS. Experimental C-V data are compared with simulation and complementary results including SIMS and TEM to confirm the accuracy of the technique.
Author(s): Chattopadhyay S, Kwa KSK, Olsen SH, Driscoll LS, O'Neill AG
Publication type: Article
Publication status: Published
Journal: Semiconductor Science and Technology
Print publication date: 01/08/2003
ISSN (print): 0268-1242
ISSN (electronic): 1361-6641
Publisher: Institute of Physics Publishing Ltd.
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