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Gate Oxide Reliability of Strained Si NMOS Devices Employing a Thin SiFe Strain Relaxed Buffer

Lookup NU author(s): John Varzgar, Dr Mehdi Kanoun, Dr Suresh Uppal, Dr Sanatan Chattopadhyay, Dr Sarah Olsen, Professor Anthony O'Neill

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Author(s): Varzgar JB, Kanoun M, Uppal S, Chattopadhyay S, Chandra P, Olsen SH, O'Neill AG, Hellstron P-E, Edholm J, Ostling M, Lyutovich K, Oehme M, Kasper E

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Materials Science and Engineering B: Advanced Functional Solid-state Materials. E-MRS Conference

Year of Conference: 2006

Pages: 203-206

Publisher: Elsevier SA

Library holdings: Search Newcastle University Library for this item

ISBN: 18734944


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