Toggle Main Menu Toggle Search

ePrints

Effective masses of two-dimensional electron gases around cubic inclusions in hexagonal silicon carbide

Lookup NU author(s): Professor Patrick Briddon

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Abstract

The main purpose of this article is to determine the two-dimensional effective mass tensors of electrons confined in thin 3C wells in hexagonal SiC, which is a first step in the understanding of in-plane electron motion in the novel quantum structures. We have performed ab initio band structure calculations, based on the density functional theory in the local density approximation, for single and multiple stacking faults leading to thin 3 C-like regions in 4 H- and 6 H-SiC and deduced electron effective masses for two-dimensional electron gases around the cubic inclusions. We have found that electrons confined in the thin 3 C-like layers have clearly heavier effective masses than in the perfect bulk 3 C-SiC single crystal.


Publication metadata

Author(s): Iwata HP, Lindefelt U, Oberg S, Briddon PR

Publication type: Article

Publication status: Published

Journal: Physical Review B

Year: 2003

Volume: 68

Issue: 24

ISSN (print): 0163-1829

ISSN (electronic):

Publisher: American Physical Society

URL: http://dx.doi.org/ 10.1103/PhysRevB.68.245309

DOI: 10.1103/PhysRevB.68.245309

Notes: Article no. 245309 7 pages


Altmetrics

Altmetrics provided by Altmetric


Actions

    Link to this publication


Share