Toggle Main Menu Toggle Search

ePrints

Optical and electrical activity of boron interstitial defects in Si

Lookup NU author(s): Professor Patrick Briddon, Dr Jon Goss

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Abstract

Density functional theory is used to investigate boron interstitial clusters and defects formed with carbon and oxygen. Using data from experimental techniques such as deep level transient spectroscopy, and electron paramagnetic resonance, photoluminescence and infrared studies, we are able to assign structures to many observed centres and begin to develop a series of reaction paths for the evolution of boron with annealing temperature depending on the relative concentrations of impurities. Among other results we demonstrate that a metastable defect composed of two boron interstitials and a self-interstitial has symmetry, vibrational modes and an electronic structure consistent with the 12 photoluminescence centre, also known as the Y centre.


Publication metadata

Author(s): Adey J, Jones R, Briddon PR, Goss JP

Publication type: Article

Publication status: Published

Journal: Journal of Physics Condensed Matter

Year: 2003

Volume: 15

Issue: 39

Pages: S2851-S2858

ISSN (print): 0953-8984

ISSN (electronic): 1361-648X

Publisher: Institute of Physics Publishing

URL: http://dx.doi.org/10.1088/0953-8984/15/39/010

DOI: 10.1088/0953-8984/15/39/010


Altmetrics

Altmetrics provided by Altmetric


Actions

    Link to this publication


Share