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Electronic properties of vacancy-oxygen complexes in SiGe alloys

Lookup NU author(s): Dr Jose Coutinho, Professor Patrick Briddon

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Abstract

Capacitance transient techniques, combined with ab initio modeling, were employed to study the electronic properties and structure of vacancy-oxygen (VO) complexes in unstrained Czochralski-grown Si1-xGex crystals (0


Publication metadata

Author(s): Markevich VP, Peaker AR, Murin LI, Coutinho J, Torres VJB, Jones R, Oberg S, Briddon PR, Auret FD, Abrosimov NV

Editor(s): Bonde Nielsen K., Nylandsted Larsen A., Weyer G.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Physica B: Condensed Matter, 22nd International Conference on Defects in (ICDS-22)

Year of Conference: 2003

Pages: 790-794

ISSN: 0921-4526

Publisher: Elsevier BV

URL: http://dx.doi.org/10.1016/j.physb.2003.09.214

DOI: 10.1016/j.physb.2003.09.214


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