Lookup NU author(s): Dr Jon Goss,
Professor Patrick Briddon
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The identity of boron clusters and boron interstitial clusters in Si, produced by radiation or implantation, has been studied theoretically. Local vibration modes of the single-boron interstitial and the diboron split interstitial (B2I) and its metastable isomer as well as substitutional dimers are found to be in good agreement with observations. The modes of a diboron defect that has trapped three interstitials B2I3 are close to those observed for the boron-related I2 luminescent center. The annealing of these centers around 400 °C coincides with the main recovery of the electrical activity of boron, but the formation of defects which are metastable casts doubt on previous modeling strategies.
Author(s): Adey J, Goss JP, Jones R, Briddon PR
Publication type: Article
Publication status: Published
Journal: Physical Review B
ISSN (print): 0163-1829
Publisher: American Physical Society
Notes: Article no. 245325
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