Lookup NU author(s): Dr Jon Goss,
Professor Patrick Briddon
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Nitrogen impurities form complexes with native defects such as vacancies and self-interstitials in silicon which are stable to high temperatures. These complexes can then suppress the formation of large vacancy and self-interstitial clusters. However, there is little known about their properties. We use first-principles densityfunctional theory to the determine the local vibrational modes, electrical levels and stability of a range of nitrogen-interstitial and vacancy complexes. Tentative assignments of the A B C photoluminescenee line and the trigonal SL6 EPR center are made to substitutional-nitrogen pair and the substitutional-nitrogen-vacancy complex.
Author(s): Goss JP, Hahn I, Jones R, Briddon PR, Oberg S
Publication type: Article
Publication status: Published
Journal: Physical Review B: Condensed Matter and Materials Physics
ISSN (print): 1098-0121
ISSN (electronic): 1550-235X
Publisher: American Physical Society
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