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Formation of BiOi, BiCs, and BiBsHi defects in e-irradiated or ion-implanted silicon containing boron

Lookup NU author(s): Professor Patrick Briddon

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Abstract

The electrical levels and thermal stabilities of complexes of interstitial boron with O and C and a boron dimer with H were analyzed using local density functional theory. The energy levels of the defects were compared with the results from deep level transient capacitance spectroscopy. Results showed that the levels observed at Ec-0.23, Ev+0.29, and E v+0.51 eV were assigned to BiOi, B iCs, and BiBsHi respectively.


Publication metadata

Author(s): Adey J, Jones R, Briddon PR

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2003

Volume: 83

Issue: 4

Pages: 665-667

ISSN (print): 0003-6951

ISSN (electronic): 1520-8842

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.1595728

DOI: 10.1063/1.1595728


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