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Cubic polytype inclusions in 4H-SiC

Lookup NU author(s): Professor Patrick Briddon

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Abstract

The multiple stacking faults in 4H-SiC, leading to narrow 3C polytype inclusions along the hexagonal c direction, were discussed. The stacking fault energies for successive stacking faults were calculated. The analysis showed that the stacking fault energy for the two stacking faults in adjacent basal planes was reduced by approximately a factor of 4 relative to that of one isolated stacking fault.


Publication metadata

Author(s): Iwata H, Lindefelt U, Oberg S, Briddon PR

Publication type: Article

Publication status: Published

Journal: Journal of Applied Physics

Year: 2003

Volume: 93

Issue: 3

Pages: 1577-1585

ISSN (print): 0021-8979

ISSN (electronic): 1520-8850

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.1534376

DOI: 10.1063/1.1534376


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