Lookup NU author(s): Dr Jose Coutinho,
Professor Patrick Briddon
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
We show that using a density-functional supercell method we are able to follow the location of defect gap levels in SiGe alloys for different alloying compositions. The method is tested for several properties of the alloys, with special emphasis in the local bond-length relaxations. Our results indicate a predominant Pauling character for the alloys, with a topological rigidity parameter a** lying between 0.7 and 0.8. A comparative study between the electrical properties of the interstitial carbon (Ci) and carbon-oxygen (CiOi) centers in the alloys, shows that these complexes interact weakly with Ge atoms. The CiOi defect is predicted to produce a hole trap that varies as ΔE(0/+)=0.41-0. 76x eV, implying its disappearance for Ge fractions x greater than ∼0.5.
Author(s): Balsas A, Coutinho J, Torres VJB, Briddon PR, Barroso M
Publication type: Article
Publication status: Published
Journal: Physical Review B
ISSN (print): 1098-0121
ISSN (electronic): 1550-235X
Publisher: American Physical Society
Notes: Article no. 085201
Altmetrics provided by Altmetric