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Calculation of deep states in SiGe alloys: Interstitial carbon-oxygen complexes

Lookup NU author(s): Dr Jose Coutinho, Professor Patrick Briddon

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Abstract

We show that using a density-functional supercell method we are able to follow the location of defect gap levels in SiGe alloys for different alloying compositions. The method is tested for several properties of the alloys, with special emphasis in the local bond-length relaxations. Our results indicate a predominant Pauling character for the alloys, with a topological rigidity parameter a** lying between 0.7 and 0.8. A comparative study between the electrical properties of the interstitial carbon (Ci) and carbon-oxygen (CiOi) centers in the alloys, shows that these complexes interact weakly with Ge atoms. The CiOi defect is predicted to produce a hole trap that varies as ΔE(0/+)=0.41-0. 76x eV, implying its disappearance for Ge fractions x greater than ∼0.5.


Publication metadata

Author(s): Balsas A, Coutinho J, Torres VJB, Briddon PR, Barroso M

Publication type: Article

Publication status: Published

Journal: Physical Review B

Year: 2004

Volume: 70

Issue: 8

ISSN (print): 1098-0121

ISSN (electronic): 1550-235X

Publisher: American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevB.70.085201

DOI: 10.1103/PhysRevB.70.085201

Notes: Article no. 085201 7 pages


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