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Temperature dependence of submicrometer strained-Si surface channel n-type MOSFETs in DT mode

Lookup NU author(s): Dr Sarah Olsen, Professor Anthony O'Neill

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Abstract

The dynamic threshold (DT) behavior of strained-Si (s-Si) n-type surface channel MOSFETs have been investigated for operating temperatures ranging from 10 to 300 K. The temperature dependence of the coefficients governing the body effect is presented, and their influence on the performance enhancement due to DT-mode operation is analyzed. The maximum transconductance is higher for the s-Si MOSFET in both operating modes over the whole temperature range. The relative improvement of the maximum transconductance between normal and DT-mode operation is found to be lower for the s-Si MOSFET (30%) compared to the Si control MOSFET (55%) over the whole temperature range. The subthreshold slope for the Si control follows the calculated behavior in both normal and DT-mode, and the subthreshold performance enhancement of the s-Si device due to DT-mode operation is closely approximated by the theoretical value (26%).


Publication metadata

Author(s): Gaspari V, Fobelets K, Ding PW, Velazquez-Perez JW, Olsen SH, O'Neill AG, Zhang J

Publication type: Letter

Publication status: Published

Journal: IEEE Electron Device Letters

Year: 2004

Volume: 25

Issue: 5

Pages: 334-336

Print publication date: 01/05/2004

ISSN (print): 0741-3106

ISSN (electronic): 1558-0563

URL: http://dx.doi.org/10.1109/LED.2004.827286

DOI: 10.1109/LED.2004.827286


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