Lookup NU author(s): Dr Michael Shaw,
Professor Patrick Briddon
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
The Eu, Er and Tm rare earth (RE) impurities in GaN were investigated by using density functional theory. It was observed that RE-VN close pair were stable at temperatures greater than 1000°C for 1 at.% RE doping and possess shallow levels possibly exciting intra-f luminescence in the visible. It was shown that the RE-VGa and RE-interstitial defects possess deep levels which exclude them as sources for visible RE-related luminescence. It was found that the gallium vacancies were bound to the RE with energies 270, 90 and 100 meV for Eu, Er and Tm, respectively.
Author(s): Filhol J-S, Jones R, Shaw MJ, Briddon PR
Publication type: Article
Publication status: Published
Journal: Applied Physics Letters
ISSN (print): 0003-6951
ISSN (electronic): 1520-8842
Publisher: American Institute of Physics
Altmetrics provided by Altmetric