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Electrical and optical properties of rod-like defects in silicon

Lookup NU author(s): Dr Jon Goss, Professor Patrick Briddon

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Abstract

Self-interstitials in silicon can aggregate to form rod-like defects (RLDs) having both electrical and optical activity. We carry out local density functional calculations for both {113} and {111} RLDs to determine their structures and electrical activity. We find that small {113} RLDs are more stable than {111} RLDs but this reverses for larger defects. We attribute the electrical activity of {113} RLDs found in deep level transient spectroscopy studies with the bounding dislocations and the 0.903 eV photoluminescence to vacancy point defects lying on the habit plane. © 2004 American Institute of Physics.


Publication metadata

Author(s): Goss JP, Briddon PR, Ebertein TAG, Jones R, Pinho N, Blumenau AT, Oberg S

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2004

Volume: 85

Issue: 20

Pages: 4633-4635

ISSN (print): 0003-6951

ISSN (electronic): 1520-8842

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.1814425

DOI: 10.1063/1.1814425


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