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Optically active erbium-oxygen complexes in GaAs

Lookup NU author(s): Dr Michael Shaw, Professor Patrick Briddon

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Abstract

The density functional modeling of Er and Er-O complexes in GaAs was analyzed. It was shown that single Er impurities are stable and electrically inert at the Ga site, but are less stable than metallic ErAs precipitates. It was found that Er-oxygen complexes are very stable and act to prevent precipitation. The results show that among the defects containing a oxygen ErGaOAs, ErGa(OAs)2 and two forms of the ErGaOAsOi have levels within 0.4 eV of the band edges consistent with the trap depth.


Publication metadata

Author(s): Coutinho J, Jones R, Shaw MJ, Briddon PR, Oberg S

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2004

Volume: 84

Issue: 10

Pages: 1683-1685

ISSN (print): 0003-6951

ISSN (electronic): 1520-8842

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.1668323

DOI: 10.1063/1.1668323


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