Lookup NU author(s): Dr Michael Shaw,
Professor Patrick Briddon
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The density functional modeling of Er and Er-O complexes in GaAs was analyzed. It was shown that single Er impurities are stable and electrically inert at the Ga site, but are less stable than metallic ErAs precipitates. It was found that Er-oxygen complexes are very stable and act to prevent precipitation. The results show that among the defects containing a oxygen ErGaOAs, ErGa(OAs)2 and two forms of the ErGaOAsOi have levels within 0.4 eV of the band edges consistent with the trap depth.
Author(s): Coutinho J, Jones R, Shaw MJ, Briddon PR, Oberg S
Publication type: Article
Publication status: Published
Journal: Applied Physics Letters
ISSN (print): 0003-6951
ISSN (electronic): 1520-8842
Publisher: American Institute of Physics
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