Lookup NU author(s): Dr Jose Coutinho,
Professor Patrick Briddon
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Density-functional supercell calculations are employed to follow the location of the donor levels arising from interstitial carbon and interstitial carbon-oxygen complexes in SiGe alloys. We show that these complexes interact weakly with neighboring Ge atoms, and that energetics rules out the existence of defect-Ge complexes involving direct Ge-C or Ge-O bonds. The C iOi defect is predicted to produce a hole trap that varies as E(0/+) - Ev = 0.41 - 0.76x eV, implying its disappearance for Ge fractions x greater than 0.5. © 2004 Elsevier B.V. All rights reserved.
Author(s): Coutinho J, Balsas A, Torres VJB, Briddon PR, Barroso M
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: E-MRS 2004: Symposium B, Material Science Issues in Advanced CMOS Source-Drain Engineering
Year of Conference: 2004
Publisher: Materials Science and Engineering B: Elsevier