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Electronic levels of interstitial carbon and carbon-oxygen centers in SiGe alloys

Lookup NU author(s): Dr Jose Coutinho, Professor Patrick Briddon

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Abstract

Density-functional supercell calculations are employed to follow the location of the donor levels arising from interstitial carbon and interstitial carbon-oxygen complexes in SiGe alloys. We show that these complexes interact weakly with neighboring Ge atoms, and that energetics rules out the existence of defect-Ge complexes involving direct Ge-C or Ge-O bonds. The C iOi defect is predicted to produce a hole trap that varies as E(0/+) - Ev = 0.41 - 0.76x eV, implying its disappearance for Ge fractions x greater than 0.5. © 2004 Elsevier B.V. All rights reserved.


Publication metadata

Author(s): Coutinho J, Balsas A, Torres VJB, Briddon PR, Barroso M

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: E-MRS 2004: Symposium B, Material Science Issues in Advanced CMOS Source-Drain Engineering

Year of Conference: 2004

Pages: 304-306

ISSN: 0921-5107

Publisher: Materials Science and Engineering B: Elsevier

URL: http://dx.doi.org/10.1016/j.mseb.2004.07.048

DOI: 10.1016/j.mseb.2004.07.048


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