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Dependence of process parameters on stress generation in aluminum thin films

Lookup NU author(s): Dr Alton Horsfall, Sorin Soare, Professor Steve Bull, Professor Nick Wright, Professor Anthony O'Neill

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Abstract

The dependence of residual stress on the process parameters for aluminum metallization has been studied using a rotating beam sensor. This shows increasing tensile stress with both the target power and ambient pressure used during the sputter deposition of the aluminum layer. The bulk resistivity of the deposited aluminum has been measured using a Van der Pauw technique on test structures fabricated alongside the sensors and this shows different trends with respect to the target power and ambient pressure. This indicates that the stress in an interconnect feature is dominated by extrinsic components, which result from the mismatch in thermal expansion coefficient between the constituent layers, rather than the defects formed during the sputter deposition of the metallization. This indicates the suitability of the stress sensor technique to the monitoring of interconnect features in a production line environment.


Publication metadata

Author(s): Horsfall AB, Wang K, Dos-Santos JMM, Soare SM, Bull SJ, Wright NG, O'Neill AG, Terry JG, Walton AJ, Gundlach AM, Stevenson JTM

Publication type: Article

Publication status: Published

Journal: IEEE Transactions on Device and Materials Reliability

Year: 2004

Volume: 4

Issue: 3

Pages: 482-486

Print publication date: 01/09/2004

ISSN (print): 1530-4388

ISSN (electronic): 1558-2574

Publisher: IEEE

URL: http://dx.doi.org/10.1109/TDMR.2004.829389

DOI: 10.1109/TDMR.2004.829389


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