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Diffusion of nitrogen in silicon

Lookup NU author(s): Dr Jon Goss, Professor Patrick Briddon

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Abstract

We use local density functional theory to investigate the diffusion of nitrogen dimers in silicon. We investigate several trajectories for the diffusing dimer finding an alternative one whose barrier is 2.69 eV and in close agreement with experimental diffusion data carried out at high temperature. We suggest that recent reports of a low barrier of 1.45 eV found from studies of dislocation unlocking are to be understood from the interaction of nitrogen dimers with interstitials or vacancies released by the dislocation. © 2005 American Institute of Physics.


Publication metadata

Author(s): Fujita N, Jones R, Goss JP, Briddon PR, Frauenheim T, Oberg S

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2005

Volume: 87

Issue: 2

ISSN (print): 0003-6951

ISSN (electronic): 1520-8842

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.1991996

DOI: 10.1063/1.1991996

Notes: Article no. 021902 3 pages


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