Toggle Main Menu Toggle Search

ePrints

Vibrational properties of elemental hydrogen centres in Si, Ge and dilute SiGe alloys

Lookup NU author(s): Dr Jose Coutinho, Richard Jones, Professor Patrick Briddon

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Abstract

The local vibrational modes arising from single interstitial hydrogen centres in Si, Si-rich SiGe, Ge-rich SiGe, and Ge crystals are modelled by an ab initio supercell method. The stress response of the 1998 and 1794 cm -1 bands that appear in proton-implanted Si and Ge samples is well reproduced, further confirming their assignment to bond-centred H+ defects. It is shown that H- in Ge is anti-bonded to a Ge atom, and is likely to be considerably less mobile than in Si. Although H+ is not trapped by the minority species in both Si-rich and Ge-rich alloys, we find that H- can be stabilized by forming anti-bonded H-Si structures. © 2005 IOP Publishing Ltd.


Publication metadata

Author(s): Balsas A, Torres VJB, Coutinho J, Jones R, Hourahine B, Briddon PR, Barroso M

Publication type: Article

Publication status: Published

Journal: Journal of Physics Condensed Matter

Year: 2005

Volume: 17

Issue: 22

Pages: S2155-S2164

ISSN (print): 0953-8984

ISSN (electronic): 1361-648X

Publisher: Institute of Physics Publishing Ltd.

URL: http://dx.doi.org/10.1088/0953-8984/17/22/002

DOI: 10.1088/0953-8984/17/22/002


Altmetrics

Altmetrics provided by Altmetric


Actions

    Link to this publication


Share