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Electronic properties and structure of a complex incorporating a self-interstitial and two oxygen atoms in silicon

Lookup NU author(s): Dr Jose Coutinho, Professor Patrick Briddon

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Abstract

The electronic properties and structure of a complex incorporating a self-interstitial (I) and two oxygen atoms are presented by a combination of deep level transient spectroscopy (DLTS), infrared absorption spectroscopy and ab-initio modeling studies. It is argued that the IO2 complex in Si can exist in four charge states (IO-2, IO02, IO+2, and IO++2). The first and the second donor levels of the IO2 complex show an inverted location order in the gap, leading to a E(0/ + +) occupancy level at E v + 0.255 eV. Activation energies for hole emission, transformation barriers between different structures, and positions of LVM lines for different configurations and charge states have been determined. These observables were calculated by density-functional calculations, which show that they are accounted for if we consider at least two charge-dependent defect structures.


Publication metadata

Author(s): Markevich VP, Murin LI, Lastovskii SB, Medvedeva IF, Lindstrom JL, Peaker AR, Coutinho J, Jones R, Torres VJB, Oberg S, Briddon PR

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Diffusion and Defect Data Pt.B: Solid State Phenomena. 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy (GADEST)

Year of Conference: 2005

Pages: 273-278

ISSN: 1012-0394

Publisher: Scitec Publications Ltd.

Library holdings: Search Newcastle University Library for this item

ISBN: 3908451132


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