Lookup NU author(s): Richard Jones,
Dr Alexandra Carvalho,
Dr Jose Coutinho,
Professor Patrick Briddon
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The donor and acceptor levels of defects in Ge as well as in Si are found using a local density functional method applied to large H-terminated defective clusters. The surfaces of the clusters are modified so that their band gaps are aligned with experimental values. It is shown that the resulting energies of the first donor and acceptor levels are within about 0.2 eV of the experimental values.
Author(s): Jones R, Carvalho A, Coutinho J, Torres VJB, Oberg S, Briddon PR
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Diffusion and Defect Data Pt.B: Solid State Phenomena. 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy
Year of Conference: 2005
Publisher: Scitec Publications Ltd.
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