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Electrical activity of Er and Er-O centers in silicon

Lookup NU author(s): Dr Jose Coutinho, Dr Michael Shaw, Professor Patrick Briddon

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Abstract

Spin-polarized density functional calculations are carried out on Er and Er-oxygen defects in crystalline Si. We find that the interstitial site is favored but the diffusion barrier of Eri is only 1.9 eV, and inevitably Eri forms complexes with impurities and intrinsic defects following postimplantation anneals. Er forms many defects with oxygen, and we argue that optically inactive Er2Si2O7 precipitates coexist alongside active Eri-On clusters. The latter are unstable when neutral and possess a range of second donor levels around Ec-0.1eV. We suggest that those with either deep levels or very shallow ones are inefficient room-temperature optical centers. The Eri-O3 defect has a donor level and symmetry consistent with observations of the room-temperature luminescence intensity and low-temperature crystal-field splitting. © 2005 The American Physical Society.


Publication metadata

Author(s): Prezzi D, Eberlein TAG, Jones R, Filhol JS, Coutinho J, Shaw MJ, Briddon PR

Publication type: Article

Publication status: Published

Journal: Physical Review B

Year: 2005

Volume: 71

Issue: 24

ISSN (print): 1098-0121

ISSN (electronic): 1550-235X

Publisher: American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevB.71.245203

DOI: 10.1103/PhysRevB.71.245203

Notes: Article no. 245203 6 pages


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