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Measurements of gate-oxide interface roughness in strained-Si virtual substrate SiGe/Si MOSFET device structures

Lookup NU author(s): Dr Sarah Olsen, Professor Anthony O'Neill

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Abstract

A series of SiGe/Si virtual substrate based n-channel Si MOSFETs have been analysed using transmission electron microscopy (TEM). The focal point of this work is to investigate the effect of gate oxidation upon an undulating virtual substrate surface. We find that cross-sectional TEM images of devices processed on such a wafer show a significant difference in the amplitude of gate-oxide interface roughness at the sloping edges of substrate surface. Moreover, such nanoscale roughening correlates to the variable vicinal nature of the undulating SiGe substrate surface. Methods for quantitative measurement of the roughness are presented. (9 References).


Publication metadata

Author(s): Norris DJ, Cullis AG, Olsen SH, O'Neill AG, Zhang J

Editor(s): Cullis, A.G., Midgely, P.A.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Microscopy of Semiconducting Materials Conference

Year of Conference: 2004

Pages: 389-392

Publisher: Institute of Physics Publishing

Notes: Cullis AG Midgley PA Bristol, UK. Microscopy of Semiconducting Materials Conference. Cambridge, UK. 31 March-3 April 2003.

Library holdings: Search Newcastle University Library for this item

Series Title: Institute of Physics Conference Series

ISBN: 9780750309790


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