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Metastable VO2 complexes in silicon: Experimental and theoretical modeling studies

Lookup NU author(s): Dr Jose Coutinho, Professor Patrick Briddon

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Abstract

We report on a combined experimental and theoretical study of the metastable form of the vacancy-dioxygen defect in Si labeled VO*2. Important new experimental observations are the detection of mixed local vibrational modes of VO*2 in 16O,18O co-doped samples, the determination of the position of LVM bands for the negatively charged defect, and an assignment of an acceptor level at about Ec - 0.05 eV. Defect energetics, electrical levels and LVM frequencies of the VO*2 complex are also investigated by ab-initio density-functional modeling. We find it to be a bistable defect which accounts well for the experimental data. The metastable form produces an acceptor state at ∼0.05 eV below Ec, and can be thought of as a VO defect perturbed by interstitial oxygen.


Publication metadata

Author(s): Murin LI, Lindstrom JL, Markevich VP, Medvedeva IF, Torres VJB, Coutinho J, Jones R, Briddon PR

Editor(s): Pichaud, B., Claverie, A.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Gettering and Defect Engineering in Semiconductor Technology XI: Gadest, Proceedings of the 11th International Autumn Meeting

Year of Conference: 2005

Pages: 223-228

Publisher: Trans Tech Publications Ltd.

Library holdings: Search Newcastle University Library for this item

ISBN: 9783908451136


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