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Local vibrations on hydrogen dimers in dilute SiGe crystalline solutions

Lookup NU author(s): Dr Jose Coutinho, Richard Jones, Professor Patrick Briddon

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Abstract

Atomic hydrogen is a concomitant impurity in semiconductors. Its presence in Si, Ge and SiGe alloys has been established by means of paramagnetic resonance, optical, electrical and theoretical modeling studies. Hydrogen self-trapping is known to occur in Si and Ge, resulting in the formation of molecular hydrogen and H2* interstitial dimers. Here we report on the properties of H22* complexes in dilute SiGe alloys, by using an ab initio density functional method. It is found that these complexes form preferentially within Si-rich regions. H2* dimers in Si-rich alloys show vibrational properties similar to those in pure Si. On the other hand, in Ge-rich material the minority Si atoms act as nucleation sites, with the consequent formation of at least one preferential H2*- Si defect variant, showing a distinct vibrational activity. © 2005 Elsevier B.V. All rights reserved.


Publication metadata

Author(s): Coutinho J, Torres VJB, Pereira RN, Jones R, Oberg S, Briddon PR

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies

Year of Conference: 2005

Pages: 363-367

ISSN: 0921-5107

Publisher: Elsevier SA

URL: http://dx.doi.org/10.1016/j.mseb.2005.08.014

DOI: 10.1016/j.mseb.2005.08.014

Library holdings: Search Newcastle University Library for this item

ISBN: 18734944


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