Lookup NU author(s): Dr Jose Coutinho,
Professor Patrick Briddon
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Atomic hydrogen is a concomitant impurity in semiconductors. Its presence in Si, Ge and SiGe alloys has been established by means of paramagnetic resonance, optical, electrical and theoretical modeling studies. Hydrogen self-trapping is known to occur in Si and Ge, resulting in the formation of molecular hydrogen and H2* interstitial dimers. Here we report on the properties of H22* complexes in dilute SiGe alloys, by using an ab initio density functional method. It is found that these complexes form preferentially within Si-rich regions. H2* dimers in Si-rich alloys show vibrational properties similar to those in pure Si. On the other hand, in Ge-rich material the minority Si atoms act as nucleation sites, with the consequent formation of at least one preferential H2*- Si defect variant, showing a distinct vibrational activity. © 2005 Elsevier B.V. All rights reserved.
Author(s): Coutinho J, Torres VJB, Pereira RN, Jones R, Oberg S, Briddon PR
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies
Year of Conference: 2005
Publisher: Elsevier SA
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