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Hydrogen self-trapping near silicon atoms in Ge-rich SiGe alloys

Lookup NU author(s): Professor Patrick Briddon

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Abstract

Infrared absorption spectroscopy and ab initio density functional modeling are used to investigate hydrogen defects that are stable at and above room temperature in proton-implanted Ge-rich SiGe alloys. We find that Si atoms are effective nucleation sites for hydrogen, leading to the formation of a dominant defect closely related to the H2* dimer in pure Si and Ge. The minority Si species in the alloys stabilizes the new complex, and strongly reduces the trapping efficiency of hydrogen by vacancies and self-interstitials. © 2006 American Institute of Physics.


Publication metadata

Author(s): Pereira RN, Nielsen BB, Coutinho J, Torres VJB, Briddon PR

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2006

Volume: 88

Issue: 14

ISSN (print): 0003-6951

ISSN (electronic): 1077-3118

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.2193802

DOI: 10.1063/1.2193802


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