Lookup NU author(s): Professor Patrick Briddon
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Infrared absorption spectroscopy and ab initio density functional modeling are used to investigate hydrogen defects that are stable at and above room temperature in proton-implanted Ge-rich SiGe alloys. We find that Si atoms are effective nucleation sites for hydrogen, leading to the formation of a dominant defect closely related to the H2* dimer in pure Si and Ge. The minority Si species in the alloys stabilizes the new complex, and strongly reduces the trapping efficiency of hydrogen by vacancies and self-interstitials. © 2006 American Institute of Physics.
Author(s): Pereira RN, Nielsen BB, Coutinho J, Torres VJB, Briddon PR
Publication type: Article
Publication status: Published
Journal: Applied Physics Letters
ISSN (print): 0003-6951
ISSN (electronic): 1077-3118
Publisher: American Institute of Physics
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