Toggle Main Menu Toggle Search

Open Access padlockePrints

Direct measurement of electromigration induced stress in interconnect structures

Lookup NU author(s): Dr Alton Horsfall, Professor Anthony O'Neill, Professor Nick Wright, Professor Steve Bull

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Abstract

This paper reports the first direct experimental measurement of electromigration-induced stress in aluminum interconnects using a series of micro-rotating stress sensors. The build up of stress gradients in interconnect metallization concomitant with back stress have been previously investigated theoretically, but experimental verification using optical or x-ray techniques has proven more difficult These initial results show a compressive stress gradient along the line, consistent with that predicted by conventional mass transport theory. The limited resolution of previous techniques restricts their ability to obtain a detailed characterization, whereas in principle this new technique can be scaled to the end of the International Technology Roadmap for Semiconductors. These preliminary findings suggest the present technique will provide a valuable tool for the investigation of back-end-of-line (BEOL) interconnect stress in the future. © 2006 IEEE.


Publication metadata

Author(s): Wilson CJ, Horsfall AB, O'Neill AG, Wright NG, Wang K, Bull SJ, Terry JG, Stevenson JTM, Walton AJ

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: IEEE International Reliability Physics Symposium Proceedings

Year of Conference: 2006

Pages: 123-127

Publisher: IEEE

URL: http://dx.doi.org/10.1109/RELPHY.2006.251202

DOI: 10.1109/RELPHY.2006.251202

Library holdings: Search Newcastle University Library for this item

ISBN: 0780394984


Actions

Find at Newcastle University icon    Link to this publication


Share