Lookup NU author(s): Michael Wardle,
Dr Jon Goss,
Professor Patrick Briddon
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Zinc oxide, a wide-gap semiconductor, typically exhibits n-type conductivity even when nominally undoped. The nature of the donor is contentious, but hydrogen is a prime candidate. We present ab initio calculations of the migration barrier for H, yielding a barrier of less than ∼0.5eV. This indicates isolated hydrogen is mobile at low temperature and that thermally stable H-related donors must logically be trapped at other defects. We argue this is also true for other oxides where H is a shallow donor. © 2006 The American Physical Society.
Author(s): Wardle MG, Goss JP, Briddon PR
Publication type: Article
Publication status: Published
Journal: Physical Review Letters
ISSN (print): 0031-9007
ISSN (electronic): 1079-7114
Publisher: American Physical Society
Notes: Article no. 205504
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