Lookup NU author(s): Professor Patrick Briddon
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It has been an accepted fact for more than 40 years that the E center in Si (the group-V impurity-vacancy pair)-one of the most studied defects in semiconductors-has only one energy level in the band gap: namely, the acceptor level at about 0.45 eV below the conduction band. We now demonstrate that it has a second level, situated in the lower half of the band gap at 0.27 eV above the valence band. The existence of this level, having a donor character, is disclosed by a combination of different transient-capacitance techniques and electronic-structure calculations. The finding seriously questions some diffusion-modeling approaches performed in the past. © 2006 The American Physical Society.
Author(s): Larsen AN, Mesli A, Bonde Nielsen K, Nielsen HK, Dobaczewski L, Adey J, Jones R, Palmer DW, Briddon PR, Oberg S
Publication type: Article
Publication status: Published
Journal: Physical Review Letters
ISSN (print): 0031-9007
ISSN (electronic): 1079-7114
Publisher: American Physical Society
Notes: Article no. 106402
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