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E center in silicon has a donor level in the band gap

Lookup NU author(s): Professor Patrick Briddon

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Abstract

It has been an accepted fact for more than 40 years that the E center in Si (the group-V impurity-vacancy pair)-one of the most studied defects in semiconductors-has only one energy level in the band gap: namely, the acceptor level at about 0.45 eV below the conduction band. We now demonstrate that it has a second level, situated in the lower half of the band gap at 0.27 eV above the valence band. The existence of this level, having a donor character, is disclosed by a combination of different transient-capacitance techniques and electronic-structure calculations. The finding seriously questions some diffusion-modeling approaches performed in the past. © 2006 The American Physical Society.


Publication metadata

Author(s): Larsen AN, Mesli A, Bonde Nielsen K, Nielsen HK, Dobaczewski L, Adey J, Jones R, Palmer DW, Briddon PR, Oberg S

Publication type: Article

Publication status: Published

Journal: Physical Review Letters

Year: 2006

Volume: 97

Issue: 10

ISSN (print): 0031-9007

ISSN (electronic): 1079-7114

Publisher: American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevLett.97.106402

DOI: 10.1103/PhysRevLett.97.106402

Notes: Article no. 106402 4 pages


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