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Extraction of strained-Si metal-oxide-semiconductor field-effect transistor parameters using small signal channel conductance method

Lookup NU author(s): Goutan Dalapati, Dr Sanatan Chattopadhyay, Luke Driscoll, Professor Anthony O'Neill, Dr Kelvin Kwa, Dr Sarah Olsen

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Abstract

Channel conductance has been employed to extract several important parameters such as threshold voltage, gain, effective channel length, series resistance, and mobility for strained-Si metal-oxide-semiconductor field-effect-transistors fabricated on relaxed silicon-germanium virtual substrates with Ge composition up to 25%. Analytical models have been developed by taking into account the effect of strain (i.e., Ge composition) on these parameters. The low field mobility of the devices has been found to increase linearly up to a Ge composition of 25% in the virtual substrate. A modified channel conductance technique has been used to extract critical fields accurately. This has also been used to predict the dependence of mobility on electric field in a strained-Si device. The critical field for silicon devices has been found to be 65 kV cm-1, while for strained-Si devices, it has been found to decrease from 62.5 to 30 kV cm-1 with increasing Ge composition (15% to 25%) in the virtual substrate. The reported results are useful for the design and simulation of strained-Si devices. © 2006 American Institute of Physics.


Publication metadata

Author(s): Dalapati GK, Chattopadhyay S, Driscoll LS, O'Neill AG, Kwa KSK, Olsen SH

Publication type: Article

Publication status: Published

Journal: Journal of Applied Physics

Year: 2006

Volume: 99

Issue: 3

Pages: 034501

ISSN (print): 0021-8979

ISSN (electronic): 1520-8850

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.2161800

DOI: 10.1063/1.2161800

Notes: Article no. 034501 8 pages


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