Lookup NU author(s): Dr Sarah Olsen, Dr Enrique Escobedo-Cousin, John Varzgar, Rimoon Agaiby, Dr Johan Seger, Dr Piotr Dobrosz, Dr Sanatan Chattopadhyay, Professor Steve Bull, Professor Anthony O'Neill
This paper presents the first results and analysis of strained Si n-channel MOSFETs fabricated on thin SiGe virtual substrates. Significant improvements in electrical performance are demonstrated compared with Si control devices. The impact of, SiGe device self-heating is compared for strained Si MOSFETs fabricated on thin and thick virtual substrates. This paper demonstrates that by using high-quality thin virtual substrates, the compromised performance enhancements commonly observed in short-gate-length MOSFETs and high-bias conditions due to self-heating in conventional thick virtual substrate devices are eradicated. The devices were fabricated with a 2.8-nm gate oxide and included NiSi to reduce the parasitic series resistance. The strained layers grown on the novel substrates comprising 20% Ge did not relax during fabrication. Good ON-state performance, OFF-state performance, and cross-wafer uniformity are demonstrated. The results show that thin virtual substrates have the potential to circumvent the major issues associated with conventional virtual substrate technology. A promising solution for realizing high-performance strained Si devices suitable for a wide range of applications is thus presented. © 2006 IEEE.
Author(s): Olsen SH, Escobedo-Cousin E, Varzgar JB, Agaiby R, Seger J, Dobrosz P, Chattopadhyay S, Bull SJ, O'Neill AG, Hellstrom P-E, Edholm J, Ostling M, Lyutovich KL, Oehme M, Kasper E
Publication type: Article
Publication status: Published
Journal: IEEE Transactions on Electron Devices
Year: 2006
Volume: 53
Issue: 9
Pages: 2296-2305
Date deposited: 09/07/2010
ISSN (print): 0018-9383
ISSN (electronic): 1557-9646
Publisher: IEEE
URL: http://dx.doi.org/10.1109/TED.2006.881049
DOI: 10.1109/TED.2006.881049
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