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Modelling of strained-Si/SiGe NMOS transistors including DC self-heating

Lookup NU author(s): Dr Nebojsa Jankovic Professor, Professor Anthony O'Neill

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Abstract

In this paper, a new model of surface-channel strained-Si/SiGe NMOSFETs is derived based on the extension of non-quasi-static (NQS) circuit model developed previously for bulk-Si devices. Basic equations of the NQS MOS model have been modified to account for new physical parameters of strained-Si and relaxed-SiGe layers. In addition, the device steady-state self-heating is efficiently included without employing the thermal-flow analog auxiliary sub-circuits. From the comparisons of modelling results with numerical simulations and measurements, it is shown that a modified NQS MOS including steady-state self-heating can accurately predict the DC characteristics of strained-Si/SiGe NMOSFETs. © 2006 Elsevier Ltd. All rights reserved.

Publication metadata

Author(s): Jankovic ND, Pesic TV, O'Neill A

Publication type: Article

Publication status: Published

Journal: Solid-State Electronics

Year: 2006

Volume: 50

Issue: 3

Pages: 496-499

Print publication date: 01/03/2006

ISSN (print): 0038-1101

ISSN (electronic): 1879-2405

Publisher: Pergamon

URL: http://dx.doi.org/10.1016/j.sse.2006.02.011

DOI: 10.1016/j.sse.2006.02.011

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