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Effect of charge on the movement of dislocations in SiC

Lookup NU author(s): Professor Patrick Briddon

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Abstract

SiC bipolar devices show a degradation under forward-biased operation which has been linked with a current induced motion of one of the two glide dislocations having either Si or C core atoms. We have carried out calculations of the core structures and dynamics of partial dislocations in 3C and 2H-SiC. In this work we present results on the effect of charge on the dislocation kinks. The calculations show that silicon kinks have a deep filled band above the valence band and the trapping of holes into this band permits motion at room temperature. © 2006 American Institute of Physics.


Publication metadata

Author(s): Eberlein TAG, Jones R, Blumenau AT, Oberg S, Briddon PR

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2006

Volume: 88

Issue: 8

ISSN (print): 0003-6951

ISSN (electronic): 1520-8842

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.2179115

DOI: 10.1063/1.2179115

Notes: Article no. 082113 3 pages


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